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Research progress on on-chip integrated optical isolators
Opto-Electronic Engineering 2025 Vol. 52 No. 2 240285
Review

Research progress on on-chip integrated optical isolators

Funds: National Key Research and Development Program of China (2021YFB3900701), the Fundamental Research Funds for the Central Universities of Ministry of Education of China (501XYGG2024117011)
DOI: 10.12086/oee.2025.240285
2025-2
2025 Vol. 52, No. 2
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    Abstract

  • Abstract

    As the information age progresses rapidly, the demand for silicon photonic integrated circuits in optical communication, quantum precision measurement, artificial intelligence optical computing, and microwave photonics continues to grow. As an essential component of silicon photonic integrated circuits, optical isolators effectively prevent the backpropagation of optical signals, ensuring system stability and reliability. They are widely used in key technologies such as optical fiber communication, quantum communication, and laser systems. This paper reviews the research progress on on-chip integrated optical isolators, focusing on different implementation methods based on magneto-optic, acousto-optic, electro-optic, and nonlinear optical effects, discussing the advantages and challenges associated with each type. Finally, the paper explores future development directions and potential applications.

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  • References

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    The copyright belongs to the Institute of Optics and Electronics, Chinese Academy of Sciences, but the article content can be freely downloaded from this website and used for free in academic and research work.
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  • About this Article

    DOI: 10.12086/oee.2025.240285
    Cite this Article
    Yang Zongqi, Li Wenxiu, Sun Xin, Huang Xinyao, Yang He, Zhang Hao, Huang Anping, Xiao Zhisong. Research progress on on-chip integrated optical isolators. Opto-Electronic Engineering 52, 240285 (2025). DOI: 10.12086/oee.2025.240285
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    Article History
    • Received Date December 04, 2024
    • Revised Date February 12, 2025
    • Accepted Date February 12, 2025
    • Published Date February 27, 2025
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  • Device type Year Isolation ratio/dB Insertion loss/dB Isolation bandwidth/nm Polarization Platform Structure Ref
    MO-MZI 2000 4.90@1550 nm — — TM GaInAsP Waveguide [46]
    2004 9.90@1550 nm 25.0 — TM HfO2 Waveguide [47]
    2008 21.0@1559 nm 8.00 10@10 dB TM Si Waveguide [48]
    2012 25.0@1495 nm 9.70 0.40@20 dB TM Si Waveguide [38]
    2013 32.0@1540 nm 22.0 0.50@21 dB TE Si Waveguide [39]
    2014 30.0@1548 nm 13.0 1.0@20 dB TM Si Waveguide [7]
    2016 26.7@1553 nm 33.4 — TE Si Waveguide [31]
    2017 17.9@1562 nm 10.0 2.0@10 dB TE a-Si:H Waveguide [49]
    2017 29.0@1523 nm 9.00 18@20 dB TM Si Waveguide [50]
    2019 30.0@1574 nm 5.00 9.0@10 dB TM Si Waveguide [32]
    30.0@1588 nm 9.00 2.0@10 dB TE Si Waveguide
    2020 32.0@1555 nm 2.30 4.0@20 dB TM Si3N4 Waveguide [40]
    30.0@1558 nm 3.00 5.0@20 dB TE Si3N4 Waveguide
    2024 50.0@1550 nm 0.687 72@30 dB TM InP Waveguide [21]
    MO-MR 2011 19.5@1541.6 nm 18.8 0.040@10 dB TM Si Ring [8]
    2011 9.00@1550 nm — 0.040@5 dB TM Si Ring [41]
    2016 32.0@1555 nm 2.30 0.60@20 dB TM Si Ring [33]
    2017 11.0@1558 nm 9.70 0.16@5 dB TM Si Ring [51]
    2017 32.0@1555 nm — 3.0@20 dB TM Si Ring [43]
    2018 25.0@1550 nm 6.50 40@20 dB TE Si Ring [42]
    2018 40.0@1560.1 nm 3.00 — TM GeSbSe Ring [34]
    2019 20.0@1584.8 nm 11.5 — TE Si3N4 Ring [32]
    2020 28.0@1570.3 nm 1.00 — TM Si3N4 Ring [40]
    MO-MMI 2005 2.9@1550 nm — — TM InGaAsP Waveguide [9]
    2016 45@1550 nm 0.800 1.60@20 dB TM Si Waveguide [35]
    2018 16@1561 nm 3.40 — TE Si Waveguide [36]
    2021 15@1537.3 nm 5.00 2.00@10 dB TE Si Waveguide [52]
    2024 45@1550 nm 2.59 53.5@35 dB TM GaAs Waveguide [53]
    45@1550 nm 2.25 70.0@35 dB TM GaAs Waveguide
    View in article Downloads
  • Device type Year Isolation ratio/dB Insertion loss/dB Isolation bandwidth/nm Polarization Platform Structure Ref
    AO 2018 15.0@1550 nm — 0.0088@3 dB TE AlN Ring [59]
    2019 8.00@1540 nm — 0.0080@3 dB TE AlN Ring [61]
    2021 12.0@1523.7 nm 0.6 0.80@16 dB TE Si Waveguide [11]
    2021 39.3@1538 nm 1 0.0016@10 dB TE LiNbO3 Ring [10]
    2021 10.0@1545.55 nm 0.1 0.0056@8 dB TE Si3N4 Ring [12]
    View in article Downloads
  • Device typeYearIsolation ratio/dBInsertion loss/dBIsolation bandwidth/nmPolarizationPlatformStructureRef
    EO200530.0@1550 nm8.0——GaAs/
    AlGaAs    		Waveguide[64]
    201512.5@1500 nm5.590.0@12.5 dB—LiNbO3Waveguide[13]
    2016—5.390.0@7 dB—LiNbO3Waveguide[65]
    202113@1556 nm180.0160@3 dB—SiRing[66]
    202348.0@1553.2 nm0.50120@37 dBTELiNbO3Waveguide[14]
    202315.0@1550 nm0.50100@10 dBTELiNbO3Waveguide[15]
    View in article Downloads
  • Device type Year Isolation ratio/dB Insertion loss/dB Isolation bandwidth/nm Polarization Platform Structure Ref
    Kerr 2013 4.0@1582.3 nm — 8.00@4 dB — Si Waveguide [16]
    2017 30@1550 nm 7.0 — — Fused silica Ring [17]
    2022 23@1550 nm 4.6 — — Si3N4 Ring [18]
    17@1550 nm 1.3 — — Si3N4 Ring
    χ(2) 2020 40@1570 nm 6.6 150@18 dB — LiNbO3 Waveguide [20]
    View in article Downloads
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程亚. 薄膜铌酸锂光电器件与超大规模光子集成(特邀)[J]. 中国激光, 2024, 51(1): 0119001.

DOI: 10.3788/CJL231256

Cheng Y. Thin film lithium niobate electro-optic devices and ultralarge-scale photonic integration (Invited)[J]. Chin J Lasers, 2024, 51(1): 0119001.

DOI: 10.3788/CJL231256

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Catalog

    Xiao Zhisong
    • 2.

      School of Physics, Beihang University, Beijing 100191, China

    • 5.

      School of Instrumentation Science and Opto-electronics Engineering, Beijing Information Science and Technology University, Beijing 100192, China

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    Research progress on on-chip integrated optical isolators
    • Figure  1

      On-chip integrated optical isolators based on different effects[12,15,18,21]

    • Figure  2

      Single-mode waveguide two-port isolator and its scattering matrix

    • Figure  3

      Diagram of traditional bulk magneto-optical isolator device

    • Figure  4

      Wafer-level indirect bonding for the preparation of MO-MZI isolator[38-39]. (a) Schematic top view of the optical isolator composed of a MZI covered with Ce: YIG; (b) Cross-sectional view; (c) Transmission spectra for forward and backward transmission; (d) Schematic of the structure after the addition of PR; (e) Transmission spectra under an applied magnetic field

    • Figure  5

      Wafer-level direct bonding for the fabrication of MO-MZI isolator [7,31]. (a) Schematic diagram of an SOI waveguide optical isolator based on MZI; (b) Microscope image of the fabricated MZI silicon waveguide optical isolator; (c) Transmission spectra for forward and backward transmission; (d) Schematic diagram of the optical isolator integrated with a TE-TM mode converter; (e) Microscope image of the integrated optical isolator on the Si platform; (f) Transmittance between port 1 and port 2 of the integrated optical isolator

    • Figure  6

      MO-MZI isolator fabricated by deposition technology [32,40]. Optical microscope and scanning electron microscope (SEM) images of (a) TM and (b) TE isolators, respectively, with a scale bar of 100 μm; Transmission spectra of (c) TM and (d) TE mode isolators, respectively; (e) SEM image of the cross-section of the fabricated Si3N4/MO waveguide; (f) Simulation of the Ey field distribution of the fundamental TM mode in the Si3N4/MO waveguide; Transmission spectra of (g) TM and (h) TE mode isolators, respectively

    • Figure  7

      MO-MR isolator[8,33]. (a) Working principle of MO-MR optical isolation; (b) Schematic diagram of the non-reciprocal optical resonator structure; (c) Transmission spectra for the TM mode; (d) Perspective view of the isolator device; (e) Microscope image of the on-chip isolator device; (f) Transmission spectra for the TM mode

    • Figure  8

      MO-MR isolator[34,40]. (a) Schematic diagram of a non-reciprocal optical resonator; (b) Top-view optical micrograph of an MO-MR isolator; (c) Transmission spectrum of the isolator; (d) Optical microscope image of a TM-mode optical isolator based on Si3N4 waveguide resonators; (e) Transmission spectrum of the isolator

    • Figure  9

      MO-MMI isolator[35-36]. (a) Schematic diagram of SOI/MMI magneto-optical isolator structure; (b) Transmission spectra of the isolator;(c) Schematic diagram of MO-MMI isolator based on TE mode; (d) Top-view optical micrograph of MO-MMI isolator; (e) Transmission spectra of the isolator

    • Figure  10

      Acousto-optic isolator[59]. (a) Representation of phase matching conditions in frequency-momentum space; (b) Schematic diagram of the phonon-photon interaction region; (c) Forward and backward transmission spectra under perfect phase matching conditions

    • Figure  11

      Acousto-optic isolator[10-12,61]. (a) Schematic diagram of the CFIDT; (b) Cross-section view of the acousto-optic interaction region;(c) Variation graph of isolation and insertion loss with frequency detuning; (d) Schematic diagram of the isolator device; (e) Cross-sectional view of the isolator device; (f) Transmission spectra of the isolator

    • Figure  12

      Electro-optic isolator[13]. (a) Working principle diagram of the MZM-based isolator; (b) Square-wave voltage signal; (c) Forward and backward transmission when modulating the MZM with the voltage shown in Fig. (b); (d) Forward and backward transmission under the driving frequency of 2.75 GHz

    • Figure  13

      Electro-optic isolator[14]. (a) Schematic of the isolator; (b) The illustration of the isolator in frequency domain; (c) Transmission spectra of the isolator

    • Figure  14

      Electro-optic isolator[15]. (a) Schematic of the electro-optic isolator; (b) Transmission spectra of the isolator in forward and backward directions; (c) Calculated isolation ratio for specified parameters at different wavelengths

    • Figure  15

      Nonlinear optical isolator [16,20]. (a) Schematic diagram of light isolation through Bragg scattering for forward-propagating light; (b) Case of backward propagation light; (c) Schematic diagram of the optical isolator. SPF: short-pass filter, LPF: long-pass filter; (d) Transmission spectra of the isolator, with the upper plot for forward-propagating light and the lower plot for backward-propagating light

    • Figure  16

      Nonlinear optical isolator [17-18,65]. (a) Schematic of spontaneous symmetry breaking in a microcavity; (b) Device diagram of a nonreciprocal isolator based on Kerr effect-induced fused silica microring; (c) Graph of the isolator's characteristics as a function of input power; (d) Microscope image of a Si3N4 isolator, scale bar: 100 μm; (e) Measured insertion loss and isolation peak under different coupling rates κ1 and κ2

    • Figure  1
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    • Figure  3
    • Figure  4
    • Figure  5
    • Figure  6
    • Figure  7
    • Figure  8
    • Figure  9
    • Figure  10
    • Figure  11
    • Figure  12
    • Figure  13
    • Figure  14
    • Figure  15
    • Figure  16
    Research progress on on-chip integrated optical isolators
    • Device type Year Isolation ratio/dB Insertion loss/dB Isolation bandwidth/nm Polarization Platform Structure Ref
      MO-MZI 2000 4.90@1550 nm — — TM GaInAsP Waveguide [46]
      2004 9.90@1550 nm 25.0 — TM HfO2 Waveguide [47]
      2008 21.0@1559 nm 8.00 10@10 dB TM Si Waveguide [48]
      2012 25.0@1495 nm 9.70 0.40@20 dB TM Si Waveguide [38]
      2013 32.0@1540 nm 22.0 0.50@21 dB TE Si Waveguide [39]
      2014 30.0@1548 nm 13.0 1.0@20 dB TM Si Waveguide [7]
      2016 26.7@1553 nm 33.4 — TE Si Waveguide [31]
      2017 17.9@1562 nm 10.0 2.0@10 dB TE a-Si:H Waveguide [49]
      2017 29.0@1523 nm 9.00 18@20 dB TM Si Waveguide [50]
      2019 30.0@1574 nm 5.00 9.0@10 dB TM Si Waveguide [32]
      30.0@1588 nm 9.00 2.0@10 dB TE Si Waveguide
      2020 32.0@1555 nm 2.30 4.0@20 dB TM Si3N4 Waveguide [40]
      30.0@1558 nm 3.00 5.0@20 dB TE Si3N4 Waveguide
      2024 50.0@1550 nm 0.687 72@30 dB TM InP Waveguide [21]
      MO-MR 2011 19.5@1541.6 nm 18.8 0.040@10 dB TM Si Ring [8]
      2011 9.00@1550 nm — 0.040@5 dB TM Si Ring [41]
      2016 32.0@1555 nm 2.30 0.60@20 dB TM Si Ring [33]
      2017 11.0@1558 nm 9.70 0.16@5 dB TM Si Ring [51]
      2017 32.0@1555 nm — 3.0@20 dB TM Si Ring [43]
      2018 25.0@1550 nm 6.50 40@20 dB TE Si Ring [42]
      2018 40.0@1560.1 nm 3.00 — TM GeSbSe Ring [34]
      2019 20.0@1584.8 nm 11.5 — TE Si3N4 Ring [32]
      2020 28.0@1570.3 nm 1.00 — TM Si3N4 Ring [40]
      MO-MMI 2005 2.9@1550 nm — — TM InGaAsP Waveguide [9]
      2016 45@1550 nm 0.800 1.60@20 dB TM Si Waveguide [35]
      2018 16@1561 nm 3.40 — TE Si Waveguide [36]
      2021 15@1537.3 nm 5.00 2.00@10 dB TE Si Waveguide [52]
      2024 45@1550 nm 2.59 53.5@35 dB TM GaAs Waveguide [53]
      45@1550 nm 2.25 70.0@35 dB TM GaAs Waveguide
    • Device type Year Isolation ratio/dB Insertion loss/dB Isolation bandwidth/nm Polarization Platform Structure Ref
      AO 2018 15.0@1550 nm — 0.0088@3 dB TE AlN Ring [59]
      2019 8.00@1540 nm — 0.0080@3 dB TE AlN Ring [61]
      2021 12.0@1523.7 nm 0.6 0.80@16 dB TE Si Waveguide [11]
      2021 39.3@1538 nm 1 0.0016@10 dB TE LiNbO3 Ring [10]
      2021 10.0@1545.55 nm 0.1 0.0056@8 dB TE Si3N4 Ring [12]
    • Device typeYearIsolation ratio/dBInsertion loss/dBIsolation bandwidth/nmPolarizationPlatformStructureRef
      EO200530.0@1550 nm8.0——GaAs/
      AlGaAs      		Waveguide[64]
      201512.5@1500 nm5.590.0@12.5 dB—LiNbO3Waveguide[13]
      2016—5.390.0@7 dB—LiNbO3Waveguide[65]
      202113@1556 nm180.0160@3 dB—SiRing[66]
      202348.0@1553.2 nm0.50120@37 dBTELiNbO3Waveguide[14]
      202315.0@1550 nm0.50100@10 dBTELiNbO3Waveguide[15]
    • Device type Year Isolation ratio/dB Insertion loss/dB Isolation bandwidth/nm Polarization Platform Structure Ref
      Kerr 2013 4.0@1582.3 nm — 8.00@4 dB — Si Waveguide [16]
      2017 30@1550 nm 7.0 — — Fused silica Ring [17]
      2022 23@1550 nm 4.6 — — Si3N4 Ring [18]
      17@1550 nm 1.3 — — Si3N4 Ring
      χ(2) 2020 40@1570 nm 6.6 150@18 dB — LiNbO3 Waveguide [20]
    • Table  1

      Performance comparison of on-chip integrated optical isolators based on magneto-optic effects

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    • Table  2

      Performance comparison of on-chip integrated optical isolators based on acousto-optic effects

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    • Table  3

      Performance comparison of on-chip integrated optical isolators based on electro-optic effects

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    • Table  4

      Performance comparison of on-chip integrated optical isolators based on nonlinear optical effects

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