E-mail Alert
RSS
| Citation: |
Pandey A, Mi ZT. Multi-wavelength nanowire micro-LEDs for future high speed optical communication. Opto-Electron Adv 7, 240011 (2024). doi: 10.29026/oea.2024.240011
|
News & Views Open Access
Multi-wavelength nanowire micro-LEDs for future high speed optical communication
-
Abstract
The future of optoelectronics is directed towards small-area light sources, foremost being microLEDs. However, their use has been inhibited so far primarily due to fabrication and integration challenges, which impair efficiency and yield. Recently, bottom-up nanostructures grown using selective area epitaxy have garnered attention as a solution to the aforementioned issues. Prof. Lan Fu et. al. have used this technique to demonstrate uniform p-i-n core-shell InGaAs/InP nanowire array light emitting diodes. The devices are capable of voltage and geometry-controlled multi-wavelength and high-speed operations. Their publication accentuates the wide capabilities of bottom-up nanostructures to resolve the difficulties of nanoscale optoelectronics. -
-
References
[1] Smith JM, Ley R, Wong MS et al. Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter. Appl Phys Lett 116, 071102 (2020). doi: 10.1063/1.5144819 [2] Konoplev SS, Bulashevich KA, Karpov SY. From large‐size to micro‐LEDs: scaling trends revealed by modeling. Phys Status Solidi (A) 215, 1700508 (2018). doi: 10.1002/pssa.201700508 [3] Yang Y, Cao XA. Removing plasma-induced sidewall damage in GaN-based light-emitting diodes by annealing and wet chemical treatments. J Vac Sci Technol B 27, 2337–2341 (2009). doi: 10.1116/1.3244590 [4] Wong MS, Kearns JA, Lee C et al. Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments. Opt Express 28, 5787–5793 (2020). doi: 10.1364/OE.384127 [5] Kishino K, Sekiguchi H, Kikuchi A. Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays. J Cryst Growth 311, 2063–2068 (2009). doi: 10.1016/j.jcrysgro.2008.11.056 [6] Pandey A, Malhotra Y, Wang P et al. N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs. Photonics Res 10, 1107–1116 (2022). doi: 10.1364/PRJ.450465 [7] Wu YP, Xiao YX, Navid I et al. InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering. Light Sci Appl 11, 294 (2022). doi: 10.1038/s41377-022-00985-4 [8] Guo W, Zhang M, Banerjee A et al. Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy. Nano Lett 10, 3355–3359 (2010). doi: 10.1021/nl101027x [9] Nguyen HPT, Zhang S, Cui K et al. p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si (111). Nano Lett 11, 1919–1924 (2011). doi: 10.1021/nl104536x [10] Liu XH, Wu YP, Malhotra Y et al. Micrometer scale InGaN green light emitting diodes with ultra-stable operation. Appl Phys Lett 117, 011104 (2020). doi: 10.1063/5.0005436 [11] Ra YH, Rashid RT, Liu XH et al. An electrically pumped surface-emitting semiconductor green laser. Sci Adv 6, eaav7523 (2020). doi: 10.1126/sciadv.aav7523 [12] Zhang FL, Su ZC, Li Z et al. High-speed multiwavelength InGaAs/InP quantum well nanowire array micro-LEDs for next generation optical communications. Opto-Electron Sci 2, 230003 (2023). doi: 10.29026/oes.2023.230003 [13] Sekiguchi H, Kishino K, Kikuchi A. Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate. Appl Phys Lett 96, 231104 (2010). doi: 10.1063/1.3443734 [14] Ra YH, Wang RJ, Woo SY et al. Full-color single nanowire pixels for projection displays. Nano Lett 16, 4608–4615 (2016). doi: 10.1021/acs.nanolett.6b01929 [15] Yang IS, Kim SJ, Niihori M et al. Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes. Nano Energy 71, 104576 (2020). -
Access History
Figures(1)
Article Metrics
Export File
Citation
Pandey A, Mi ZT. Multi-wavelength nanowire micro-LEDs for future high speed optical communication. Opto-Electron Adv 7, 240011 (2024). doi: 10.29026/oea.2024.240011
Format
Content
DownLoad:
-
Figure 1.
(a) Schematic of the nanowire cross-section top and profile view. (b) An SEM image of a nanowire array. (c) Schematic of the fabricated nanowire LED. (d) L-I-V curves for a representative nanowire LED. (e) Normalized voltage-dependent EL spectra. (f) SEM image of nanowire arrays arranged to form the letters “ANU”. The inset shows an infrared camera image of the EL emission from the nanowire array LEDs.
