Pandey A, Mi ZT. Multi-wavelength nanowire micro-LEDs for future high speed optical communication. Opto-Electron Adv 7, 240011 (2024). doi: 10.29026/oea.2024.240011
Citation: Pandey A, Mi ZT. Multi-wavelength nanowire micro-LEDs for future high speed optical communication. Opto-Electron Adv 7, 240011 (2024). doi: 10.29026/oea.2024.240011

News & Views Open Access

Multi-wavelength nanowire micro-LEDs for future high speed optical communication

More Information
  • The future of optoelectronics is directed towards small-area light sources, foremost being microLEDs. However, their use has been inhibited so far primarily due to fabrication and integration challenges, which impair efficiency and yield. Recently, bottom-up nanostructures grown using selective area epitaxy have garnered attention as a solution to the aforementioned issues. Prof. Lan Fu et. al. have used this technique to demonstrate uniform p-i-n core-shell InGaAs/InP nanowire array light emitting diodes. The devices are capable of voltage and geometry-controlled multi-wavelength and high-speed operations. Their publication accentuates the wide capabilities of bottom-up nanostructures to resolve the difficulties of nanoscale optoelectronics.
  • 加载中
  • [1] Smith JM, Ley R, Wong MS et al. Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter. Appl Phys Lett 116, 071102 (2020). doi: 10.1063/1.5144819

    CrossRef Google Scholar

    [2] Konoplev SS, Bulashevich KA, Karpov SY. From large‐size to micro‐LEDs: scaling trends revealed by modeling. Phys Status Solidi (A) 215, 1700508 (2018). doi: 10.1002/pssa.201700508

    CrossRef Google Scholar

    [3] Yang Y, Cao XA. Removing plasma-induced sidewall damage in GaN-based light-emitting diodes by annealing and wet chemical treatments. J Vac Sci Technol B 27, 2337–2341 (2009). doi: 10.1116/1.3244590

    CrossRef Google Scholar

    [4] Wong MS, Kearns JA, Lee C et al. Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments. Opt Express 28, 5787–5793 (2020). doi: 10.1364/OE.384127

    CrossRef Google Scholar

    [5] Kishino K, Sekiguchi H, Kikuchi A. Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays. J Cryst Growth 311, 2063–2068 (2009). doi: 10.1016/j.jcrysgro.2008.11.056

    CrossRef Google Scholar

    [6] Pandey A, Malhotra Y, Wang P et al. N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs. Photonics Res 10, 1107–1116 (2022). doi: 10.1364/PRJ.450465

    CrossRef Google Scholar

    [7] Wu YP, Xiao YX, Navid I et al. InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering. Light Sci Appl 11, 294 (2022). doi: 10.1038/s41377-022-00985-4

    CrossRef Google Scholar

    [8] Guo W, Zhang M, Banerjee A et al. Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy. Nano Lett 10, 3355–3359 (2010). doi: 10.1021/nl101027x

    CrossRef Google Scholar

    [9] Nguyen HPT, Zhang S, Cui K et al. p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si (111). Nano Lett 11, 1919–1924 (2011). doi: 10.1021/nl104536x

    CrossRef Google Scholar

    [10] Liu XH, Wu YP, Malhotra Y et al. Micrometer scale InGaN green light emitting diodes with ultra-stable operation. Appl Phys Lett 117, 011104 (2020). doi: 10.1063/5.0005436

    CrossRef Google Scholar

    [11] Ra YH, Rashid RT, Liu XH et al. An electrically pumped surface-emitting semiconductor green laser. Sci Adv 6, eaav7523 (2020). doi: 10.1126/sciadv.aav7523

    CrossRef Google Scholar

    [12] Zhang FL, Su ZC, Li Z et al. High-speed multiwavelength InGaAs/InP quantum well nanowire array micro-LEDs for next generation optical communications. Opto-Electron Sci 2, 230003 (2023). doi: 10.29026/oes.2023.230003

    CrossRef Google Scholar

    [13] Sekiguchi H, Kishino K, Kikuchi A. Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate. Appl Phys Lett 96, 231104 (2010). doi: 10.1063/1.3443734

    CrossRef Google Scholar

    [14] Ra YH, Wang RJ, Woo SY et al. Full-color single nanowire pixels for projection displays. Nano Lett 16, 4608–4615 (2016). doi: 10.1021/acs.nanolett.6b01929

    CrossRef Google Scholar

    [15] Yang IS, Kim SJ, Niihori M et al. Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes. Nano Energy 71, 104576 (2020).

    Google Scholar

  • 加载中
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Figures(1)

Article Metrics

Article views(671) PDF downloads(236) Cited by(0)

Access History

Other Articles By Authors

Article Contents

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint