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He PH, Niu LY, Fan Y, Zhang HC, Zhang LP et al. Active odd-mode-metachannel for single-conductor systems. Opto-Electron Adv 5, 210119 (2022). doi: 10.29026/oea.2022.210119
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Active odd-mode-metachannel for single-conductor systems
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Abstract
Although tremendous efforts have been devoted to investigating planar single-conductor circuits, it remains challenging to provide tight confinement of electromagnetic field and compatibility with active semi-conductor components such as amplifier, harmonic generator and mixers. Single-conductor spoof surface plasmon polariton (SSPP) structure, which is one of the most promising planar single-conductor transmission media due to the outstanding field confinement, still suffers from the difficulty in integrating with the active semi-conductor components. In this paper, a new kind of odd-mode-metachannel (OMM) that can support odd-mode SSPPs is proposed to perform as the fundamental transmission channel of the single-conductor systems. By introducing zigzag decoration, the OMM can strengthen the field confinement and broaden the bandwidth of odd-mode SSPPs simultaneously. More importantly, the active semi-conductor amplifier chip integration is achieved by utilizing the intrinsic potential difference on OMM, which breaks the major obstacle in implementing the single-conductor systems. As an instance, an amplifier is successfully integrated on the single-conductor OMM, which can realize both loss compensation and signal amplification. Meanwhile, the merits of OMM including crosstalk suppression, low radar cross section (RCS), and flexibility are comprehensively demonstrated. Hence, the proposed OMM and its capability to integrate with the active semi-conductor components may provide a new avenue to future single-conductor conformal systems and smart skins. -
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References
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He PH, Niu LY, Fan Y, Zhang HC, Zhang LP et al. Active odd-mode-metachannel for single-conductor systems. Opto-Electron Adv 5, 210119 (2022). doi: 10.29026/oea.2022.210119
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Figure 1.
The insulator-metal-insulator model.
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Figure 2.
Schematic diagram of the whole amplifier-integrated OMM.
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Figure 3.
Geometrical parameters and dispersion curves of the typical SSPP waveguide and the OMM. (a) Geometrical parameters of the typical SSPP structure, where the width of the center strip is w fixed as 4 mm, the period of the unit is p, the width of the grooves is a and the width of the narrow strip is w0. (b) Dispersion curves of the typical SSPP structure with varying a, where p = 1.5 mm, w0 = 1 mm. (c) Dispersion curves of the typical SSPP structure with varying p, where a = 0.75 mm and w0 = 1 mm. (d) Dispersion curves of the typical SSPP structure with varying w0, where p = 1.5 mm, a = 0.75 mm. (e) Geometrical parameters of the OMM, where the width of the center strip is w1 fixed as 4 mm, the period of the unit is p1, the width of the narrow strip is w01, the folding extent of the zigzag grooves is described by X and Y. (f) Dispersion curves of the typical SSPP structure with varying X, where w1 = 4 mm, w01 = 2.8 mm, a1 = 0.3 mm, p1 = 1.5 mm, Y=0.2 mm.
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Figure 4.
Cutoff frequency and decay factor curves with varying X, where the other parameters are the same with those in Fig. 3(f).
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Figure 5.
Electric-field distributions of the cross sections of the SSPP structures at 15 GHz. (a–c) Absolute value of electric-field distributions on the cross-section of (a) even-mode of the typical SSPP (X = 0 mm) waveguide, (b) even mode and (c) odd mode of the OMM (X = 0.7 mm). (d) X-component, (e) Y-component and (f) Z-component of electric field of even mode of the OMM. (g) X-component, (h) Y-component and (i) Z-component of electric field of odd mode of the OMM. (j) X-component, (k) Y-component and (l) Z-component of electric field of slot line. (m) X-component, (n) Y-component and (o) Z-component of electric field of SOMM.
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Figure 6.
The conversion structures. (a) Conversion structure between the quasi-TEM mode and odd-mode SSPPs, where 5 linearly gradient SSPP units are employed. (b) Simulated S-parameters of the conversion structure, where the OMM is composed of 46 units. (c) The compact conversion structure to convert odd-mode SSPP waves into voltage input of chips.
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Figure 7.
Experiments of the amplifier-integrated OMM. (a) Top view of the sample. (b) Bottom view of the sample. (c) Measured S-parameters of the sample. (d) The photograph of the EM scanning system composed of a VNA and a monopole probe installed in a mechanical platform in an EM shielding chamber. (e, f) The measured near-electric-field distributions of the amplifier-integrated OMM sample at (e) 14 and (f) 16 GHz.
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Figure 8.
Crosstalk suppression and low RCS properties of the OMM. (a) Coupling pair of SSPP channel. (b) Crosstalk of typical even-even coupling pair and odd-even coupling pair. (c) RCS of the OMM compared to that of a CPW with the same total size.
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Figure 9.
Flexibility test of the amplifier-integrated OMM.
