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Obata K, Kawabata S, Hanada Y et al. High performance micromachining of sapphire by laser induced plasma assisted ablation (LIPAA) using GHz burst mode femtosecond pulses. Opto-Electron Sci 3, 230053 (2024). doi: 10.29026/oes.2024.230053
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Article Open Access
High performance micromachining of sapphire by laser induced plasma assisted ablation (LIPAA) using GHz burst mode femtosecond pulses
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Abstract
GHz burst-mode femtosecond (fs) laser, which emits a series of pulse trains with extremely short intervals of several hundred picoseconds, provides distinct characteristics in materials processing as compared with the conventional irradiation scheme of fs laser (single-pulse mode). In this paper, we take advantage of the moderate pulse interval of 205 ps (4.88 GHz) in the burst pulse for high-quality and high-efficiency micromachining of single crystalline sapphire by laser induced plasma assisted ablation (LIPAA). Specifically, the preceding pulses in the burst generate plasma by ablation of copper placed behind the sapphire substrate, which interacts with the subsequent pulses to induce ablation at the rear surface of sapphire substrates. As a result, not only the ablation quality but also the ablation efficiency and the fabrication resolution are greatly improved compared to the other schemes including single-pulse mode fs laser direct ablation, single-pulse mode fs-LIPAA, and nanosecond-LIPAA.-
Keywords:
- femtosecond laser /
- GHz burst mode /
- ablation /
- LIPAA /
- laser induced plasma assisted ablation /
- sapphire
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References
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Supplementary information for High performance micromachining of sapphire by laser induced plasma assisted ablation (LIPAA) using GHz burst mode femtosecond pulses 
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Obata K, Kawabata S, Hanada Y et al. High performance micromachining of sapphire by laser induced plasma assisted ablation (LIPAA) using GHz burst mode femtosecond pulses. Opto-Electron Sci 3, 230053 (2024). doi: 10.29026/oes.2024.230053
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Figure 1.
Schematic illustrations of (a) experimental setup for the GHz burst LIPAA process, (b) a pulse form of GHz burst mode containing P intra-pulses, and the measured waveforms of (c) a GHz burst pulse with 10 intra-pulse numbers and (d) a pulse at the single-pulse mode operation as comparison.
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Figure 2.
(a) Dependence of the ablated depth by GHz burst LIPAA process on the intra-pulse number in GHz burst pulse for the various intra-pulse fluence (0.18, 0.22, 0.27, 0.36, 0.44 and 0.53 J/cm2) and (b) pulse forms of GHz burst mode with various number of P intra-pulses.
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Figure 3.
Dependence of ablation depth on laser fluence for (a) GHz burst LIPAA process (circle, P=10, 1 shot) and conventional single-pulse mode direct ablation (triangle, 10 shots) and (b) GHz burst LIPAA process (circle, P=10, 1 shot) and single-pulse mode LIPAA process (square, 10 shots). Schematic schemes with pulse forms of each process are illustrated below graphs.
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Figure 4.
SEM images of ablated spots on the sapphire surfaces with different configurations: GHz burst LIPAA (P= 10) at intra-pulse fluence of (a) 0.22 J/cm2, (b) 0.27 J/cm2, and (c) 0.53 J/cm2, single-pulse mode LIPAA (10 shots of fs laser pulses at a repetition rate of 10 Hz) at same intra-pulse fluence of (d) 0.22 J/cm2, (e) 0.27 J/cm2, and (f) 0.53 J/cm2 with (g) schematic scheme of two-step process, and single-pulse mode direct fs laser ablation at laser fluences of (h) 2.33 J/cm2, (i) 3.13 J/cm2, and (j) 8.05 J/cm2. Schematic illustrations of each scheme are shown at left side of SEM images.
