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Liu JJ, Yang XX, Xu QL et al. Unraveling the efficiency losses and improving methods in quantum dot-based infrared up-conversion photodetectors. Opto-Electron Sci 3, 230029 (2024). doi: 10.29026/oes.2024.230029
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Unraveling the efficiency losses and improving methods in quantum dot-based infrared up-conversion photodetectors
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Abstract
Quantum dot-based up-conversion photodetector, in which an infrared photodiode (PD) and a quantum dot light-emitting diode (QLED) are back-to-back connected, is a promising candidate for low-cost infrared imaging. However, the huge efficiency losses caused by integrating the PD and QLED together hasn’t been studied sufficiently. This work revealed at least three origins for the efficiency losses. First, the PD unit and QLED unit usually didn’t work under optimal conditions at the same time. Second, the potential barriers and traps at the interconnection between PD and QLED units induced unfavorable carrier recombination. Third, much emitted visible light was lost due to the strong visible absorption in the PD unit. Based on the understandings on the loss mechanisms, the infrared up-conversion photodetectors were optimized and achieved a breakthrough photon-to-photon conversion efficiency of 6.9%. This study provided valuable guidance on how to optimize the way of integration for up-conversion photodetectors. -
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References
[1] Ban D, Han S, Lu ZH et al. Near-infrared to visible light optical upconversion by direct tandem integration of organic light-emitting diode and inorganic photodetector. Appl Phys Lett 90, 093108 (2007). doi: 10.1063/1.2710003 [2] Gao XH, Cui YY, Levenson RM et al. In vivo cancer targeting and imaging with semiconductor quantum dots. Nat Biotechnol 22, 969–976 (2004). doi: 10.1038/nbt994 [3] Gu YY, Guo ZY, Yuan W et al. High-sensitivity imaging of time-domain near-infrared light transducer. Nat Photonics 13, 525–531 (2019). doi: 10.1038/s41566-019-0437-z [4] Zhao YQ, Yang SY, Zhao JS et al. PbS quantum dots based organic-inorganic hybrid infrared detecting and display devices. Mater Lett 196, 176–178 (2017). doi: 10.1016/j.matlet.2017.03.009 [5] De Iacovo A, Venettacci C, Colace L et al. PbS colloidal quantum dot photodetectors operating in the near infrared. Sci Rep 6, 37913 (2016). doi: 10.1038/srep37913 [6] Ng TN, Wong WS, Chabinyc ML et al. Flexible image sensor array with bulk heterojunction organic photodiode. Appl Phys Lett 92, 213303 (2008). doi: 10.1063/1.2937018 [7] Yang Y, Zhang YH, Shen WZ et al. Semiconductor infrared up-conversion devices. Prog Quantum Electron 35, 77–108 (2011). doi: 10.1016/j.pquantelec.2011.05.001 [8] Shen TY, Qin JJ, Bai YJ et al. Giant magneto field effect in up-conversion amplified spontaneous emission via spatially extended states in organic-inorganic hybrid perovskites. Opto-Electron Adv 5, 200051 (2022). doi: 10.29026/oea.2022.200051 [9] Xu KM, Zhou WJ, Ning ZJ. Integrated structure and device engineering for high performance and scalable quantum dot infrared photodetectors. Small 16, 2003397 (2020). doi: 10.1002/smll.202003397 [10] Wu ZH, Yao WC, London AE et al. Elucidating the detectivity limits in shortwave infrared organic photodiodes. Adv Funct Mater 28, 1800391 (2018). doi: 10.1002/adfm.201800391 [11] Wu ZH, Zhai YC, Yao WC et al. The role of dielectric screening in organic shortwave infrared photodiodes for spectroscopic image sensing. Adv Funct Mater 28, 1805738 (2018). doi: 10.1002/adfm.201805738 [12] Wang WG, Wu ZH, Ye TK et al. High-performance perovskite light-emitting diodes based on double hole transport layers. J Mater Chem C 9, 2115–2122 (2021). doi: 10.1039/D0TC05669C [13] He JH. High-performance warm white LED based on thermally stable all inorganic perovskite quantum dots. Opto-Electron Adv 6, 230022 (2023). doi: 10.29026/oea.2023.230022 [14] Lu TW, Lin XS, Guo W et al. High-speed visible light communication based on micro-LED: a technology with wide applications in next generation communication. Opto-Electron Sci 1, 220020 (2022). doi: 10.29026/oes.2022.220020 [15] Wu ZH, Liu P, Qu XW et al. Identifying the surface charges and their impact on carrier dynamics in quantum-dot light-emitting diodes by impedance spectroscopy. Adv Opt Mater 9, 2100389 (2021). doi: 10.1002/adom.202100389 [16] Wu ZH, Liu P, Zhang WD et al. Development of InP quantum dot-based light-emitting diodes. ACS Energy Lett 5, 1095–1106 (2020). doi: 10.1021/acsenergylett.9b02824 [17] Liu MX, Voznyy O, Sabatini R et al. Hybrid organic-inorganic inks flatten the energy landscape in colloidal quantum dot solids. Nat Mater 16, 258–263 (2017). doi: 10.1038/nmat4800 [18] Ning ZJ, Voznyy O, Pan J et al. Air-stable n-type colloidal quantum dot solids. Nat Mater 13, 822–828 (2014). doi: 10.1038/nmat4007 [19] Wang RL, Shang YQ, Kanjanaboos P et al. Colloidal quantum dot ligand engineering for high performance solar cells. Energy Environ Sci 9, 1130–1143 (2016). doi: 10.1039/C5EE03887A [20] Marus M, Xia Y, Zhong HY et al. Bright infra-red quantum dot light-emitting diodes through efficient suppressing of electrons. Appl Phys Lett 116, 191103 (2020). doi: 10.1063/5.0005843 [21] Zhang N, Tang HD, Shi KM et al. High-performance all-solution-processed quantum dot near-infrared-to-visible upconversion devices for harvesting photogenerated electrons. Appl Phys Lett 115, 221103 (2019). doi: 10.1063/1.5124735 [22] Wei YZ, Ren ZW, Zhang AD et al. Hybrid organic/PbS quantum dot bilayer photodetector with low dark current and high detectivity. Adv Funct Mater 28, 1706690 (2018). doi: 10.1002/adfm.201706690 [23] Yu H, Kim D, Lee J et al. High-gain infrared-to-visible upconversion light-emitting phototransistors. Nat Photonics 10, 129–134 (2016). doi: 10.1038/nphoton.2015.270 [24] Kim DY, Choudhury KR, Lee JW et al. PbSe nanocrystal-based infrared-to-visible up-conversion device. Nano Lett 11, 2109–2113 (2011). doi: 10.1021/nl200704h [25] Tang HD, Shi KM, Zhang N et al. Up-conversion device based on quantum dots with high-conversion efficiency over 6%. IEEE Access 8, 71041–71049 (2020). doi: 10.1109/ACCESS.2020.2987043 [26] Zhou WJ, Shang YQ, García de Arquer FP et al. Solution-processed upconversion photodetectors based on quantum dots. Nat Electron 3, 251–258 (2020). doi: 10.1038/s41928-020-0388-x [27] Lee JW, Kim DY, So F. Unraveling the gain mechanism in high performance solution-processed PbS infrared PIN photodiodes. Adv Funct Mater 25, 1233–1238 (2015). doi: 10.1002/adfm.201403673 [28] Shen HB, Gao Q, Zhang YB et al. Visible quantum dot light-emitting diodes with simultaneous high brightness and efficiency. Nat Photonics 13, 192–197 (2019). doi: 10.1038/s41566-019-0364-z [29] Mu G, Rao TY, Zhang S et al. Ultrasensitive colloidal quantum-dot upconverters for extended short-wave infrared. ACS Appl Mater Interfaces 14, 45553–45561 (2022). doi: 10.1021/acsami.2c12002 [30] Xu QL, Yang XX, Liu JJ et al. Elaborating the interplay between the detecting unit and emitting unit in infrared quantum dot up-conversion photodetectors. Nanoscale 15, 8197–8203 (2023). doi: 10.1039/D3NR01237A [31] Chuang CHM, Brown PR, Bulović V et al. Improved performance and stability in quantum dot solar cells through band alignment engineering. Nat Mater 13, 796–801 (2014). doi: 10.1038/nmat3984 [32] Kumawat NK, Gupta D, Kabra D. Recent advances in metal halide-based perovskite light-emitting diodes. Energy Technol 5, 1734–1749 (2017). doi: 10.1002/ente.201700356 [33] Bi Y, Pradhan S, Gupta S et al. Infrared solution-processed quantum dot solar cells reaching external quantum efficiency of 80% at 1.35µm and JSC in excess of 34 mA cm-2. Adv Mater 30, 1704928 (2018). doi: 10.1002/adma.201704928 [34] Vafaie M, Fan JZ, Morteza Najarian A et al. Colloidal quantum dot photodetectors with 10-ns response time and 80% quantum efficiency at 1, 550nm. Matter 4, 1042–1053 (2021). doi: 10.1016/j.matt.2020.12.017 [35] Würfel U, Neher D, Spies A et al. Impact of charge transport on current-voltage characteristics and power-conversion efficiency of organic solar cells. Nat Commun 6, 6951 (2015). doi: 10.1038/ncomms7951 [36] Neher D, Kniepert J, Elimelech A et al. A new figure of merit for organic solar cells with transport-limited photocurrents. Sci Rep 6, 24861 (2016). doi: 10.1038/srep24861 [37] Deng YZ, Lin X, Fang W et al. Deciphering exciton-generation processes in quantum-dot electroluminescence. Nat Commun 11, 2309 (2020). doi: 10.1038/s41467-020-15944-z -
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Supplementary information for Unraveling the efficiency losses and improving methods in quantum dot-based infrared up-conversion photodetectors 
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Liu JJ, Yang XX, Xu QL et al. Unraveling the efficiency losses and improving methods in quantum dot-based infrared up-conversion photodetectors. Opto-Electron Sci 3, 230029 (2024). doi: 10.29026/oes.2024.230029
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Figure 1.
(a) Schematic picture showing the device structure of quantum dot-based up-conversion photodetector. (b) The PL spectrum of ZnCdSe QDs and spectral absorbance of PbS QDs, the inset shows the TEM image of PbS QDs. (c) The J-V-L characteristics of the up-conversion photodetector in dark and under 18 mW/cm2 980 nm illumination. (d) ηpp of the up-conversion photodetector with its definition and physical interpretation shown in the inset. (e) The spectral IPCE of the up-conversion device under different applied bias. (f) The EQE of the up-conversion device; the inset shows the EL spectrum of the up-conversion device with 6 V applied bias and infrared illumination.
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Figure 2.
(a) The J-V-L characteristics and (b) EQE of ZnCdSe-based QLEDs with TFB or PTAA as hole transport layer. (c) The J-V-L characteristics of the up-conversion device with TFB replaced by PTAA as interconnection layer. (d) The J-V characteristics of the PbS-based PDs in dark or under 18 mW/cm2 980 nm illumination. (e) The photocurrent vs. effective bias characteristics of PbS-based PD and up-conversion devices with TFB or PTAA as interconnection layers, solid line represents the fitted photocurrent with Hetch formula. (f) The effective biases across the PD unit and QLED unit in the up-conversion device with TFB or PTAA as interconnection layers.
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Figure 3.
(a) Equivalent circuit explaining the voltage allocations in up-conversion devices. (b) The quantum efficiencies of independent PD and QLED under working conditions simulating those of the PD unit and QLED unit in up-conversion devices. (c−d) The comparisons between the products of effective IPCE × EQEi and the measured ηpp of up-conversion device with TFB and PTAA as interconnection layers, the green curves show the gaps between IPCE × EQEi product and ηpp, representing the integration losses.
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Figure 4.
(a) EQE characteristics of the QLED based on large CdSe-based quantum dots. (b) J-V-L characteristics and (c) IPCE or EQEi characteristics of the up-conversion devices integrating the QLED with less efficiency roll-offs. (d) The ηpp of (green) up-conversion devices with optimized PbS layers and improved matching between PD unit and QLED unit, (pale red) up-conversion devices before optimization.
