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Jia LM, Cheng L, Zheng W. 8-nm narrowband photodetection in diamonds. Opto-Electron Sci 2, 230010 (2023). doi: 10.29026/oes.2023.230010
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Abstract
Spectrally-selective photodetection plays a crucial role in various applications, including target imaging and environmental monitoring. Traditional deep-ultraviolet (DUV) narrowband photodetection systems consist of broadband photodetectors and filters, which complicates the architecture and constrains imaging quality. Here, we introduce an electronic-grade diamond single-crystal photodetector exhibiting an exceptionally narrow spectral response in the DUV range with a full width at half maximum of 8 nm. By examining diamond photodetectors with varying dislocation densities, we propose that mitigating the defect-induced trapping effect to achieve charge collection narrowing, assisted by free exciton radiative recombination, is an effective strategy for narrowband photodetection. The superior performance of this device is evidenced through the imaging of DUV light sources, showcasing its capability to differentiate between distinct light sources and monitor human-safe sterilization systems. Our findings underscore the promising potential applications of electronic-grade diamond in narrowband photodetection and offer a valuable technique for identifying electronic-grade diamond. -
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References
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Supplementary information for 8-nm narrowband photodetection in diamonds 
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Jia LM, Cheng L, Zheng W. 8-nm narrowband photodetection in diamonds. Opto-Electron Sci 2, 230010 (2023). doi: 10.29026/oes.2023.230010
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Figure 1.
Device structure and narrowband photodetection of electronic-grade diamond A-based photodetectors. (a) X-ray rocking curves of (111) and (004) planes of diamond A. Insets are ϕ-scans of the (111) plane at different χ (50°–60°). (b) Raman spectrum of diamond A. (c) Schematic diagram of the device structure. (d) EQE spectra of Device 1 and Device 2 based on diamond A, where extremely narrow EQE peaks have been shown. Insets are corresponding optical photographs and responsivity spectra with photon energy as abscissa. (e) The performance of typical narrowband photodetectors over the entire spectral range with the diamond device showing the shortest detection wavelength and narrowest EQE peak.
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Figure 2.
Narrowband photodetection mechanism based on diamond A. (a) Schematic diagram of main physical processes occurring in diamond A under photoexcitation. (b) Absorption spectrum of diamond A. The inset shows a schematic diagram of absorption process and a differential spectrum of absorption coefficient. (c) PL spectrum of diamond A under 193 nm pulse excitation. (d) and (e) Spatial distribution of photoexcited excess carrier generation rate
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Figure 3.
Broadband photodetection mechanism based on diamonds B and C. (a) EQE comparison of photodetectors based on diamonds A, B, and C. (b) Schematic diagram of main possible physical processes of diamonds B and C under photoexcitation. (c) PL spectra of diamonds A, B, and C under 193 nm pulse excitation. (d) Voltage signals (ΔV) of photodetectors based on diamonds A, B, and C under 193 nm pulse excitation. Lifetime of 201 μs, 916 μs, and 5183 μs can be obtained by falling edges, respectively. (e) and (f) Spatial distribution of photoexcited excess carrier generation rate G and steady-state carriers within diamond C-based device. The two wavelengths selected are 205 nm and 220 nm, respectively. (g) Experimental EQE and simplified calculated EQE of the diamond C-based photodetector with a consistent trend shown between.
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Figure 4.
Performance of narrowband photodetectors based on diamond A. (a) Dark current and responsivity at different bias under 228 nm and 185 nm irradiation. (b) Specific detectivity (D*) spectrum under 1 V bias. (c) Linear dynamic range (LDR) of the device under 1 V bias and 228 nm irradiation. (d) Temporal response under 1 V bias and 228 nm irradiation with different optical powers. (e) Responsivity spectra under 0-10 V bias. The inset is an enlarged view of the shortwave region. (f) Measurements on varying temperatures of the device under 0–3 V bias. Different trends are exhibited under 228 nm and 185 nm irradiation.
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Figure 5.
Imaging demonstration of narrowband photodetectors for DUV light sources. (a) Photograph of 222 nm excimer lamp. (b) Imaging of the device for excimer lamp with a size of 65 × 22 pixels whose size is 500 μm × 500 μm. (c) Normalized excimer lamp spectrum and EQE of the device, where an overlap can be observed. (d) Photograph of mercury lamp. (e) Imaging of the device for mercury lamp. (f) Normalized mercury lamp spectrum and EQE of the device, where only a weak overlap is found.
