Citation: | Qi HX, Du ZC, Hu XY, Yang JY, Chu SS et al. High performance integrated photonic circuit based on inverse design method. Opto-Electron Adv 5, 210061 (2022). doi: 10.29026/oea.2022.210061 |
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Supplementary information for High performance integrated photonic circuit based on inverse design method |
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Design optimization process of the all-optical switch. (a) General configuration of the all-optical switch. (b) The initialization and discrete optimization permittivity distribution in the x-y two-dimensional cross-section, where bias=0 and bias=infinity.
Characterization of the all-optical switch. (a) The “ON” state of normalized intensity distribution in the x-y plane from theoretical calculation. (b) The “OFF” state of normalized intensity distribution in the x-y plane from theoretical calculation. (c) Scanning electron microscopy (SEM) image of the all-optical switch. The size of the optimized area was 2 μm×2 μm. (d) Simulation results of the transmission of all-optical switch. (e) Experiment results of the normalized transmission of all-optical switch. (f) The simulation and experiment results of the all-optical switch ON/OFF contrast.
Characterization of the all-optical switch. (a) The “OFF” state of normalized intensity distribution in the x-y plane from theoretical calculation at t=0 fs. (b–d) The “ON” state of normalized intensity distribution in the x-y plane from theoretical calculation at t=40 fs, 80 fs and 100 fs, respectively. (e) Transmission of the output of the all-optical switch under different delay time at 1500 nm-1600 nm. (f) Transmission of the output of the all-optical switch under different delay time at 1500 nm.
Design optimization process of all-optical XOR logic gate. (a) General configuration of the all-optical XOR logic gate. (b) The initialization and discrete optimization permittivity distribution in the x-y two-dimensional cross-section, where bias=0 and bias=infinity.
Characterization of the all-optical XOR logic gate. (a) The “01” input of normalized intensity distribution in the x-y plane from theoretical calculation. (b) The “10” input of normalized intensity distribution in the x-y plane from theoretical calculation. (c) The “11” input of normalized intensity distribution in the x-y plane from theoretical calculation. (d) Scanning electron microscopy (SEM)image of the XOR logic gate. The size of the optimized area was 2 μm×2 μm. (e) Simulation results of the transmission of all-optical switch. (f) Experiment results of the normalized transmission of all-optical XOR logic gate.
Characterization of the all-optical integrated circuit. (a) General configuration of the all-optical integrated circuit. (b) The “11” input (“ON” and ”ON” states) of normalized intensity distribution in the x-y plane from theoretical calculation. (c) The “10” input (“ON” and ”OFF” states) of normalized intensity distribution in the x-y plane from theoretical calculation. (d) The “01” input (“OFF” and ”ON” states) of normalized intensity distribution in the x-y plane from theoretical calculation. (e) The “00” input (“OFF” and ”OFF” states) of normalized intensity distribution in the x-y plane from theoretical calculation.
Characterization of the all-optical integrated circuit. (a) Scanning electron microscopy (SEM) image of the all-optical integrated circuit. The size of the optimized area was 2.5 μm×7 μm. (b) Simulation results of the transmission of the all-optical integrated circuit. (c) Experiment results of the normalized transmission of the all-optical integrated circuit.