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| Citation: |
Gao PL, Li C, Zhou H et al. Eco-friendly quantum-dot light-emitting diode display technologies: prospects and challenges. Opto-Electron Sci x, 240028 (2025). doi: 10.29026/oes.2025.240028
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Review Open Access
Eco-friendly quantum-dot light-emitting diode display technologies: prospects and challenges
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Abstract
Eco-friendly quantum-dot light-emitting diodes (QLEDs), which employ colloidal quantum dots (QDs) such as InP, and ZnSe, stand out due to their low toxicity, color purity, and high efficiency. Currently, significant advancements have been made in the performance of cadmium-free QLEDs. However, several challenges persist in the industrialization of eco-friendly QLED displays. For instance, (1) the poor performance, characterized by low photoluminescence quantum yield (PLQY), unstable ligand, and charge imbalance, cannot be effectively addressed with a solitary strategy; (2) the degradation mechanism, involving emission quenching, morphological inhomogeneity, and field-enhanced electron delocalization remains unclear; (3) the lack of techniques for color patterning, such as optical lithography and transfer printing. Herein, we undertake a specific review of all technological breakthroughs that endeavor to tackle the above challenges associated with cadmium-free QLED displays. We begin by reviewing the evolution, architecture, and operational characteristics of eco-friendly QLEDs, highlighting the photoelectric properties of QDs, carrier transport layer stability, and device lifetime. Subsequently, we focus our attention not only on the latest insights into device degradation mechanisms, particularly, but also on the remarkable technological progress in color patterning techniques. To conclude, we provide a synthesis of the promising prospects, current challenges, potential solutions, and emerging research trends for QLED displays.-
Keywords:
- quantum dots /
- eco-friendly /
- light-emitting diodes /
- degradation mechanisms /
- displays
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References
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Gao PL, Li C, Zhou H et al. Eco-friendly quantum-dot light-emitting diode display technologies: prospects and challenges. Opto-Electron Sci x, 240028 (2025). doi: 10.29026/oes.2025.240028
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Figure 1.
Sequential chart of key achievements in the evolution of eco-friendly QLEDs.
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Figure 2.
Key challenges in the development of InP-based QDs and ZnSe-based QDs.
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Figure 3.
The synthesis strategies for InP QDs. (a) Gradient shell QDs (b) Multi-shelled QDs synthesized with aminophosphine. (c) Introducing a GaP layer between the InP core and ZnS shell to passivate the surface and eliminate traps. (d) Potential distribution and energy level shifts in core-shell heterostructured QDs with high PLQY. (e) Epitaxial deposition of ZnS on InP QDs. (f) Suppressing the cation exchange at the core/shell interface of InP QDs. (g) Temperature gradient solution growth strategy for the growth of the inner shell layer. (h) A quasi-ZnSe shell to minimize surface defects in the InP core with Ostwald ripening hindrance and lifetime extension. (i) ZnF2-assisted synthesis for removing the surface oxide layer of InP QDs to produce high-lifetime QLEDs. Figure reproduced with permission from: (a) ref.33, Elsevier; (b) ref.56, John Wiley and Sons; (c) ref.82, American Chemical Society; (d) ref.40, Springer Nature; (e) ref.42, (f) ref.83, (g) ref.84, American Chemical Society. (h) ref.52, John Wiley and Sons; (i) ref.37, American Chemical Society.
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Figure 4.
The synthesis strategies for ZnSe QDs. (a) Synthesis scheme for large ZnSe/ZnS QDs. (b) Bulk-like ZnSe core QDs. (c) A reactivity-controlled epitaxial growth strategy. (d) Alloyed ZnSeTe QDs with high PLQY. (e) Heterostructural tailoring of blue ZnSeTe QDs. (f) Controlling the internal ZnSe shell thickness of the QDs. (g) Controlling shell growth of ZnSeTe QDs. (h) Chematic illustrations of the synthesis of ZnTeSe (core), ZnTeSe/ZnSe (C/S) and ZnTeSe/ZnSe/ZnS (C/S/S) QDs, with corresponding TEM images. (i) Influence of Te clustering on optical properties of ZnSeTe QDs. Figure reproduced with permission from: (a) ref.35, Elsevier; (b) ref.70, American Chemical Society; (c) ref.86, Springer Nature; (d) ref.36, American Chemical Society; (e) ref.66, Elsevier; (f) ref.68, John Wiley and Sons; (g) ref.71, John Wiley and Sons; (h) ref.65, Springer Nature; (i) ref.88, John Wiley and Sons.
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Figure 5.
The ligand exchange strategies for InP QDs. (a) Replacing oleic acid ligands with hexanoic acid. (b) Substituting oleic acid ligands with semiconducting diblock copolymer units. (c) Modifying InP QDs with different alkyl diamines. (d) Investigating the ligand effect in the passivation of InP QDs. Figure reproduced with permission from: (a) ref.22, Springer Nature; (b) ref.99, Royal Society of Chemistry; (c) ref.23, Springer Nature; (d) ref.95, John Wiley and Sons.
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Figure 6.
ZnSe QDs ligand exchange strategies. (a) Chloride passivation via liquid or solid ligand exchange with oleic acid. (b) Bromide decoration of ZnSeTe/ZnSe/ZnS QDs. (c) Oleic acid surface ligand exchange with an alkanethiol variant. (d) Introduction of 4MBZC as a dual-ion passivation ligand. Figure reproduced with permission from: (a) ref.65, Springer Nature; (b) ref.76, John Wiley and Sons; (c) ref.100, (d) ref.94, American Chemical Society.
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Figure 7.
Development of QLED device structure.
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Figure 8.
The improvement of the charge balance in InP-QLEDs. (a) Acrylate-functionalized ZnMgO. (b) The PEABr:MABr interlayer between ZnMgO and Al cathode. (c) Organic PO-T2T as an ETL to prevent the over-injection of electrons, leading to improved charge balance within the QLEDs. The molecular structure of (d) BFTP-regulated TFB self-assembled dipole interface monolayer, enhancing hole injection efficiency into InP QDs. (e) B-PTAA as an alternative material for HTL with high hole mobility and a deep HOMO level. (f) DBTA utilized as HTL. (g) A blended EML by combining DOFL-TPD with InP-based QD. Figure reproduced with permission from: (a) ref.54, American Chemical Society; (b) ref.111, Royal Society of Chemistry; (c) ref.49, John Wiley and Sons; (d) ref.47, Royal Society of Chemistry; (e) ref.38, Tsinghua University Press; (f) ref.41, American Chemical Society; (g) ref.39, American Chemical Society.
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Figure 9.
Enhancements in charge balancing of blue ZnSe-based QLEDs. (a) Illustration of the structure and energy level alignment in a conventional QLED device. (b) Modification of ZnMgO NPs through additional Mg reaction. (c) Employment of Sn-doped ZnO to mitigate electron over-injection. (d) Demonstration of ZnSeTe-based blue top-emitting QLEDs. Figure reproduced with permission from: (a) ref.114, Royal Society of Chemistry; (b) ref.72, (c) ref.69, American Chemical Society. (d) ref.67, Springer Nature.
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Figure 10.
The degradation mechanisms of InP-based QLEDs. (a) The impacts of the electron delocalization and the associated energy transfers on the characteristics of InP-based QLEDs. (b) The STEM and HR-TEM images. (c) Photoluminescence spectra of QDs in varying magnetic fields. (d) Depiction of exciton decoherence as a phonon-mediated, thermally activated process. (e) Emission quenching of InP/ZnSe/ZnS QDs under UV exposure. Figure reproduced with permission from: (a) ref.115, (b) ref.20, John Wiley and Sons; (c) ref.116, American Chemical Society; (d) ref.117, American Chemical Society; (e) ref.118, Springer Nature.
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Figure 11.
Mechanism for the blue emission of ZnSe-based QLED. (a) Radial probabilities for the presence of electrons and holes of excitons in QD with/without irradiation. (b) Absorption (dashed line) and PL spectra (solid line) of ZnSe QDs with varying Te ratios and ZnSe shell thicknesses. (c) The temperature-dependent PL spectroscopy of the main and tail emission. (d) Size-dependent molar absorption coefficients. (e) PL spectra along with schematic diagrams. (f) Impact of nearest-neighbor pairs of Te atoms on the optical properties of ZnSe/ZnSe1–XTeX/ZnSe/ZnS NCs; Copyright 2022, American Chemical Society. (g) Morphological and crystalline structural changes upon excess HF treatment over the synthesis process. Figure reproduced with permission from: (a) ref.120, American Chemical Society; (b) ref.121, authors; ref.122, John Wiley and Sons; (c) ref.58, (e) ref.123, (f) ref.124, American Chemical Society; (g) ref.125, John Wiley and Sons.
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Figure 12.
Recent progress on eco-friendly QD patterning technologies. (a) Inkjet-printed QLED utilizing blue InP/ZnS/ZnS QDs as emission layer. (b) Nanoimprinting-aided inkjet-printed QLED for enhanced light extraction. (c) Cadmium-free RGB inkjet-printed QLED. (d) Comparison of InP-based green QLEDs printed with and without photoinitiator inclusion. Figure reproduced with permission from: (a) ref.126, (b) ref.127, Elsevier; (c) ref.128, John Wiley and Sons; (d) ref.129, Royal Society of Chemistry.
