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Tian YX, Dong BY, Li YX et al. Photonics-assisted THz wireless communication enabled by wide-bandwidth packaged back-illuminated modified uni-traveling-carrier photodiode. Opto-Electron Sci 3, 230051 (2024). doi: 10.29026/oes.2024.230051
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Article Open Access
Photonics-assisted THz wireless communication enabled by wide-bandwidth packaged back-illuminated modified uni-traveling-carrier photodiode
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Abstract
This paper presents a wide-bandwidth back-illuminated modified uni-traveling-carrier photodiode (MUTC-PD) packaged with standard WR-5 rectangular waveguide for high-speed wireless communications. With optimized epitaxy structure and coplanar waveguide electrodes, the fabricated 4-μm-diameter PD exhibits ultra-flat frequency response and high saturation power. Integrated passive circuits including low-loss bias-tee and E-plane probe are designed to package the PD into a compact module with waveguide output. The packaged PD module has demonstrated a flat frequency response with fluctuations within ±2.75 dB over a broadband of 140–220 GHz and a high saturated output power of −7.8 dBm (166 μW) at 140 GHz. For wireless communication applications, the packaged PD is used to implement 1-m free space transmission at carrier frequencies of 150.5 and 210.5 GHz, with transmission rates of 75 and 90 Gbps, respectively. -
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References
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Tian YX, Dong BY, Li YX et al. Photonics-assisted THz wireless communication enabled by wide-bandwidth packaged back-illuminated modified uni-traveling-carrier photodiode. Opto-Electron Sci 3, 230051 (2024). doi: 10.29026/oes.2024.230051
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Figure 1.
(a) Epitaxy structure of the proposed MUTC-PD. (b) Influence of high-impedance CPW inductance on frequency response of the 4-μm-diameter PD. (c) 3D schematic view of the PD. (d) SEM image of the fabricated device. (e) Frequency responses under various photocurrents of the 4-μm-diameter PD under 2 V bias voltage.
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Figure 2.
(a) Top view of passive circuits consist of interdigital inductor-based RF-choke, interdigital capacitor-based DC-block and E-plane probe. Measurement and simulation results of the back-to-back (b) bias-tee and (c) probe package.
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Figure 3.
(a) Schematic of the WR-5 packaged PD module. ESD: electro static discharge. (b) Wire-bonding interconnection of the passive circuits. (c) Microscope photo of the flip-chip bonded PD chip. (d) I-V characteristics before and after flip-chip bonding.
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Figure 4.
(a) The packaged WR-5 MUTC-PD module. (b) Frequency response under various photocurrents and (c) frequency-dependent saturation characteristics at 2 V bias voltage of WR-5 PD module.
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Figure 5.
Comparison of saturation output power against operation frequency for packaged UTC-PD modules. Open marks are for coaxial output modules, and closed ones for waveguide output modules. The rectangular mark indicates module with resonant matching circuit.
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Figure 6.
Experimental setup of THz wireless communication with the proposed MUTC-PD. AWG: arbitrary waveform generator, ECL: external cavity laser, IQ Mod: IQ modulator, OC: optical coupler, SG: signal generator, LNA: low noise amplifier, EA: electrical amplifier, OSC: oscilloscope, SG: signal generator. (a) Spectrum of the transmitting signal with 25 G Baud. (b) Optical spectrum of the OC at a frequency difference of 150.5 GHz between two lasers. (c) Optical spectrum of the OC at a frequency difference of 210.5 GHz between two lasers.
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Figure 7.
EVM performance at different baud rates: (a) 150.5-GHz and (b) 210.5-GHz.
