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Wu Z, Xu LM, Wang JD et al. Finely regulated luminescent Ag-In-Ga-S quantum dots with green-red dual emission toward white light-emitting diodes. Opto-Electron Adv 7, 240050 (2024). doi: 10.29026/oea.2024.240050
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Article Open Access
Finely regulated luminescent Ag-In-Ga-S quantum dots with green-red dual emission toward white light-emitting diodes
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Abstract
Ag-In-Ga-S (AIGS) quantum dots (QDs) have recently attracted great interests due to the outstanding optical properties and eco-friendly components, which are considered as an alternative replacement for toxic Pb- and Cd-based QDs. However, enormous attention has been paid to how to narrow their broadband spectra, ignoring the application advantages of the broadband emission. In this work, the AIGS QDs with controllable broad green-red dual-emission are first reported, which is achieved through adjusting the size distribution of QDs by controlling the nucleation and growth of AIGS crystals. Resultantly, the AIGS QDs exhibit broad dual-emission at green- and red- band evidenced by photoluminescence (PL) spectra, and the PL relative intensity and peak position can be finely adjusted. Furthermore, the dual-emission is the intrinsic characteristics from the difference in confinement effect of large particles and tiny particles confirmed by temperature-dependent PL spectra. Accordingly, the AIGS QDs (the size consists of 17 nm and 3.7 nm) with 530 nm and 630 nm emission could successfully be synthesized at 220 °C. By combining the blue light-emitting diode (LED) chips and dual-emission AIGS QDs, the constructed white light-emitting devices (WLEDs) exhibit a continuous and broad spectrum like natural sunlight with the Commission Internationale de l’Eclairage (CIE) chromaticity coordinates of (0.33, 0.31), a correlated color temperature (CCT) of 5425 K, color rendering index (CRI) of 90, and luminous efficacy of radiation (LER) of 129 lm/W, which indicates that the AIGS QDs have huge potential for lighting applications.-
Keywords:
- quantum dots /
- Ag-In-Ga-S /
- dual emission /
- white light-emitting diodes
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References
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Wu Z, Xu LM, Wang JD et al. Finely regulated luminescent Ag-In-Ga-S quantum dots with green-red dual emission toward white light-emitting diodes. Opto-Electron Adv 7, 240050 (2024). doi: 10.29026/oea.2024.240050
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Figure 1.
Schematic diagram of the size-dependent band gap and spectral correspondence based on size effect of QDs.
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Figure 1.
The temperature-dependent microstructure of AIGS QDs and corresponding PL spectra. (a, b, c) TEM, (d, f, h) HRTEM images, (e, g, i) histograms of the statistical distributions of particle sizes and corresponding (j, k, l) normalized PL spectra of the AIGS QDs synthesized at 180 °C, 220 °C and 250 °C, respectively.
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Figure 2.
The growth mechanism of dual-emissive AIGS QDs. (a) Schematic diagram of nucleation and growth patterns as a function of temperature. Stage Ⅰ: increased temperature induces decreased critical size and more nucleation, stage Ⅱ: higher nucleation rate at higher temperature lead to the growth of smaller crystals under the same concentration of precursor compared to lower temperature. (b) XRD patterns of the AIGS QDs synthesized at 180 °C, 220 °C and 250 °C, inserted on the upper and lower axe are the standard diffraction peaks of AgInS2 and AgGaS2. (c) The element ratio of the AIGS QDs synthesized at 180 °C, 220 °C and 250 °C analyzed by ICP-OES.
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Figure 3.
The element distribution of typical AIGS QDs. (a) Schematic diagram structure of AIGS. (b–f) EDS element mapping of typical AIGS QDs for (c) Ag, (d) In, (e) Ga, (f) S.
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Figure 4.
The optical properties of AIGS QDs with dual emission. (a) Photographs of the AIGS QDs synthesized at different temperature under room light (top) and UV irradiation (bottom). (b) Corresponding PL and UV-vis absorbance spectra were recorded with the excitation wavelength of 365 nm under different temperature.
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Figure 5.
PL mechanism of dual-emissive AIGS QDs. (a) The temperature-dependent PL spectra of AIGS QDs under 370 nm laser excitation. (b) Peak position versus temperature for AIGS QDs. (c) Excitation power (370 nm)-dependent PL spectra AIGS QDs. (d) Emission intensity versus excitation power for the AIGS QDs at room temperature.
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Figure 6.
WLED based on dual-emissive AIGS QDs. (a) The schematic diagram of constructing dual-emissive AIGS QD-based white light-emitting diode and the corresponding optical photograph of the white-emitting device. (b) PL spectra of the WLED and (c) corresponding CIE chromaticity coordinates under different voltage.
