Baeva M, Gets D, Polushkin A, Vorobyov A, Goltaev A et al. ITO-free silicon-integrated perovskite electrochemical cell for light-emission and light-detection. Opto-Electron Adv 6, 220154 (2023). doi: 10.29026/oea.2023.220154
Citation: Baeva M, Gets D, Polushkin A, Vorobyov A, Goltaev A et al. ITO-free silicon-integrated perovskite electrochemical cell for light-emission and light-detection. Opto-Electron Adv 6, 220154 (2023). doi: 10.29026/oea.2023.220154

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ITO-free silicon-integrated perovskite electrochemical cell for light-emission and light-detection

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  • Halide perovskite light-emitting electrochemical cells are a novel type of the perovskite optoelectronic devices that differs from the perovskite light-emitting diodes by a simple monolayered architecture. Here, we develop a perovskite electrochemical cell both for light emission and detection, where the active layer consists of a composite material made of halide perovskite microcrystals, polymer support matrix, and added mobile ions. The perovskite electrochemical cell of CsPbBr3:PEO:LiTFSI composition, emitting light at the wavelength of 523 nm, yields the luminance more than 7000 cd/m2 and electroluminescence efficiency of 4.3 lm/W. The device fabricated on a silicon substrate with transparent single-walled carbon nanotube film as a top contact exhibits 40% lower Joule heating compared to the perovskite optoelectronic devices fabricated on conventional ITO/glass substrates. Moreover, the device operates as a photodetector with a sensitivity up to 0.75 A/W, specific detectivity of 8.56×1011 Jones, and linear dynamic range of 48 dB. The technological potential of such a device is proven by demonstration of 24-pixel indicator display as well as by successful device miniaturization by creation of electroluminescent images with the smallest features less than 50 μm.
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