Wu J, Qin F, Li X P. Atomically thin Fresnel zone plate with broadband focusing property[J]. Opto-Electron Eng, 2022, 49(4): 220011. doi: 10.12086/oee.2022.220011
Citation: Wu J, Qin F, Li X P. Atomically thin Fresnel zone plate with broadband focusing property[J]. Opto-Electron Eng, 2022, 49(4): 220011. doi: 10.12086/oee.2022.220011

Atomically thin Fresnel zone plate with broadband focusing property

    Fund Project: National Natural Science Foundation of China (62075085) and Guangzhou Science and Technology Program (202002030258)
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  • The planar diffractive lens in zone plate-type configuration plays important roles in the modern optical system, especially in the advanced optical imaging system. Most of them are constructed with opaque metal or dielectric materials with a high refractive index, which restricts the integration possibility for the miniaturized photonic systems. In this work, we proposed and experimentally demonstrated an atomic thin Fresnel zone plate device with 2D semiconductor material. Based on the loss-assisted phase modulation mechanism, an extraordinary phase modulation capability in the entire visible region has been achieved by an atomic thin MoS2 sheet. By utilizing the femtosecond laser scribing technique, a binary phase Fresnel zone plate has been fabricated on the atomic thin MoS2 sheet. The diffraction-limited focusing property in broadband has been demonstrated in simulation and experiments. Combining with the direct bandgap property of the monolayer MoS2 material, this phenomenon may pave the road for the integrated optical system.
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  • Although the diffractive lens with the photon-sieve and the metasurface metasurface type have been severely investigated in recently year, zone plate plate-type constructed with a series concentric phase and amplitude belts is still the most commonly used configuration, and have been frequently used in many applications including space telescope, high high-performance microscope object, projection illumination system, etc. Nevertheless, the integration possibility of such components in the opto-electronic circuits remains a challenge, due to the configuration of the incompatible materials configuration constructed with the opaque metal or dielectric materials with high refractive index. Two-dimensional transition -metal dichalcogenides (2D TMD) have attracted massive attention recently. As their typical representative, Molybdenum disulfide (MoS2) has been intensively investigated and shown extremely high quantum efficiency in photocurrent generation and photo-luminescence process owing to its unique photon-electronic characteristics. However, their capability for wavefront engineering has less been appreciated by far, due to the insufficient phase modulation capability when the thickness of the MoS2 sheet is decreased to atomic layers. In this work, we proposed and experimentally demonstrated an atomic thin Fresnel zone plate device. Based on the loss-assisted phase modulation mechanism, an extraordinary phase modulation of π phase shift for the optimized wavelength of 535 nm has been achieved by a monolayer MoS2 sheet with a thickness of 0.67 nm. Unlike the phase shift that comes from the dielectric or plasmonic resonator which highly rely relies on the spatial dimension of the resonator itself, the loss-assisted phase only determined by the basic configuration scheme has no obvious connection with the geometric size of the scribed pattern. Therefore, such an original phase shift mechanism can be applied for the creation of diffractive optical devices more conveniently. By utilizing the femtosecond laser scribing technique, a binary phase Fresnel zone plate has been fabricated on a monolayer and bilayer MoS2 sheet. The FZP is composed of 8 scribed concentric belts on the MoS2 sheet to form the alternating π and 0 phase zones between the scribed and un-scribed region. The radii of the zone belt are given by the standard FZP equation for satisfying the construction interference at the desired focal position. Experimentally measured results shown that a diffraction diffraction-limited focal spot with a focusing efficiency of around 5% has been obtained by the monolayer FZP device, which is notably outperforms the reported monolayer TMD lens with a focusing efficiency of 0.08%. Benefitting from the unique k dispersion property of the MoS2 sheet, such a significant phase modulation property could be extended to broadband through increasing the thickness of MoS2 from monolayer to bilayer. The simulation results shown that a 0.2π and above phase shift could be achieved in the wavelength region from blue to red light. The broadband focusing property have has been demonstrated in simulation and experiments from the wavelength of 405 nm to 635 nm. Combining with the direct bandgap property of the monolayer MoS2 material, this phenomenon may pave the road for the integrated opto-electronic system.

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