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Abstract
In many application scenarios, silicon (Si) photonics favors the integration of III-V gain material onto Si substrate to realize the on-chip light source. In addition to the current popular integration approaches of III-V-on-Si wafer bonding or direct heteroepitaxial growth, a newly emerged promising solution of epitaxial regrowth on bonded substrate has attracted a lot of interests. High-quality III-V material realization and successful laser demonstrations show its great potential to be a promising integration platform for low-cost, high-integration density and highly scalable active-passive photonic integration on Si. This paper reviews recent research work on this regrowth on bonded template platform including template developments, regrown material characterizations and laser demonstrations. The potential advantages, opportunities and challenges of this approach are discussed.-
Keywords:
- Si photonics /
- III-V-on-Si laser /
- photonic integration /
- epitaxy regrowth
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References
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Figure 1.
A schematic drawing of the process flow for the advanced heterogeneous integration by using regrowth on III-V-on-Si bonding template.
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Figure 2.
Pictures of the fabricated InP-on-Si bonded wafers from HPE, III-V Lab and Sophia University. Figure repoduced with permisson from: (a) ref.29, under a Creative Commons Attribution 4.0 International License; (b) ref.31, (c) ref.25, John Wiley and Sons.
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Figure 3.
Epitaxial regrowth laser structures on bonded templates from HPE, III-V Lab and Sophia University. Figure repoduced with permisson from: (a) ref.29, under a Creative Commons Attribution 4.0 International License; (b) ref.32, (c) ref.26, IEEE.
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Figure 4.
AFM images and Nomarski microscope image of the epitaxial regrowth on bonded substrate from HPE, III-V Lab and Sophia University. Figure repoduced with permisson from: (a) ref.29,under a Creative Commons Attribution 4.0 International License; (b) ref.32, (c) ref.26, IEEE.
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Figure 5.
Cross-sectional TEM (or STEM) images of the MQW or bulk epitaxy on the bonded substrate from HPE and III-V Lab. Figure repoduced with permisson from: (a, b) ref.29, under a Creative Commons Attribution 4.0 International License; (c) ref.32, IEEE; (d) ref.31, John Wiley and Sons.
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Figure 6.
(a) The electron channeling patterns corresponding to the three-beam (400) and (220) imaging conditions that were used in ECCI characterization. (b) A representative ECCI image with only one TD. Figure repoduced with permisson from ref.29, under a Creative Commons Attribution 4.0 International License.
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Figure 7.
The PL measurements at room temperature for the epitaxy on both InP and the bonded substrate from HPE, III-V Lab and Sophia University. Figure repoduced with permisson from: (a) ref.29, under a Creative Commons Attribution 4.0 International License; (b) ref.32, (c) ref.26, IEEE.
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Figure 8.
XRD measurements on the epitaxy samples that from the three different research groups. Figure repoduced with permisson from: (a) ref.29, under a Creative Commons Attribution 4.0 International License; (b) ref.31, John Wiley and Sons; (c) ref.27, Elsevier.
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Figure 9.
(a) A microscope image of a FP laser with hybrid facets. (b) Schematic drawing of the device cross-section and (c) SEM of the hybrid facet. (d) RT pulsed LIV. (e) Pulsed LI up to 40 °C (inset: mode profile at facets). (f) Device spetrum. (g) cw LI up to 25 °C. Figure repoduced with permisson from ref.29, under a Creative Commons Attribution 4.0 International License.
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Figure 10.
(a) A microscope image of a FP laser with Si waveguide facets and a SEM image of a III/V-to-Si taper. (b) RT pulsed LIV (inset: microscope image of the device), (c) pulsed LI up to 40 °C (inset: mode profile at facets). Figure repoduced with permisson from ref.29, under a Creative Commons Attribution 4.0 International License.
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Figure 11.
(a) SEM image of the fabricated FP laser on InP-on-Si substrate. (b) J-L characteristics in pulse injection mode at 20 °C: laser on bonded substrate (solid line) and the laser on InP (dash line). (c) J-L characteristics in pulse injection mode measured at different temperatures for the laser on bonded substrate. (d) Threshold current density evolution against temperature for the laser on bonded substrate (blue) and on InP (red). Figure repoduced with permisson from ref.32, IEEE.
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Figure 12.
(a) Measured lasing spectra of five FP lasers under C-W operation for a driving current of 100 mA at 20 °C. (b−d) L-I characteristics under C-W operation for different temperatures for the lasers emitting at 1515 nm, 1580 nm and 1635 nm. Figure repoduced with permisson from ref.35, IEEE.
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Figure 13.
(a) A typical laser structure. (b) The typical I-L characteristics of the MQW laser on the bonded substrate at various temperatures. (c) A lasing spectrum for the MQW laser at an input current of J=6.83 kA/cm2. (d) The temperature dependence of the threshold current density for the DH bulk lasers and MQW lasers on bonded substrates and on native substraes. Figure repoduced with permisson from: (a) ref.26, IEEE; (b, c, d) ref.27, Elsevier.
