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Zhou R, Lin S D, Ding Y, Yang H, Ong Y K K et al. Enhancement of laser ablation via interacting spatial double-pulse effect. Opto-Electron Adv 1, 180014 (2018). doi: 10.29026/oea.2018.180014
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Original Article Open Access
Enhancement of laser ablation via interacting spatial double-pulse effect
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Abstract
A novel spatial double-pulse laser ablation scheme is investigated to enhance the processing quality and efficiency for nanosecond laser ablation of silicon substrate. During the double-pulse laser ablation, two splitted laser beams simultaneously irradiate on silicon surface at a tunable gap. The ablation quality and efficiency are evaluated by both scanning electron microscope and laser scanning confocal microscope. As tuning the gap distance, the ablation can be significantly enhanced if the spatial interaction between the two splitted laser pulses is optimized. The underlying physical mechanism for the interacting spatial double-pulse enhancement effect is attributed to the redistribution of the integrated energy field, corresponding to the temperature field. This new method has great potential applications in laser micromachining of functional devices at higher processing quality and faster speed.-
Keywords:
- double-pulse /
- laser ablation /
- efficiency /
- quality
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References
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Supplementary information for Enhancement of laser ablation via interacting spatial double-pulse effect 
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Zhou R, Lin S D, Ding Y, Yang H, Ong Y K K et al. Enhancement of laser ablation via interacting spatial double-pulse effect. Opto-Electron Adv 1, 180014 (2018). doi: 10.29026/oea.2018.180014
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Figure 1.
Schematic diagram of the experimental setup for the spatial double-pulse laser ablation.
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Figure 2.
SEM images, 3D reconstructions and 2D profiles of craters created by the splitted double-pulse laser beams at different gaps of (a) 100 μm, (b) 80 μm, (c) 60 μm, (d) 0 μm, and (e) by single laser beam at a total laser power of 10 W.
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Figure 3.
SEM images of (a) two intersecting grooves processed by double laser pulses and (b) zoom-in state.
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Figure 4.
The schematic diagram of distributions of energy field (upper), temperature field (middle) and the interaction between laser and silicon (bottom) at different gaps.
