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摘要:
随着航天遥感领域对分辨率、高速传输、低功耗方面需求的提高，基于电荷累加的TDICMOS探测器应运而生。该探测器无论在工艺上还是探测器结构上均与TDICCD和传统数字累加的CMOS器件有着本质的不同。因此，许多关于探测器性能参数的测试方法无法适用于电荷累加的TDICMOS。本文基于电荷累加TDICMOS的自身特性，先后提出了关于电荷-DN转换因子、满阱电荷、电荷转移效率、读出噪声等参数的新测试方法，同时搭建TDICMOS测试系统进行实验验证。实验证明了上述测试方法的正确性和工程可实现性，为今后TDICMOS工程应用提供了重要依据。
Abstract:With the increasing demand for high resolution, high speed transmission and low power dissipation in space remote sensing, TDICMOS detector based on charge accumulating will become an important part of video detectors. No matter in process or in structure, the detector is essentially different from the traditional TDICCD and CMOS detector with digital accumulating. Therefore, many original methods for testing the performance parameters of the detector cannot be applied to the TDICMOS detector based on charge accumulating. This paper proposes the test methods of charge-DN factor, full well charges, transfer efficiency, readout noise based on TDICMOS characteristics. We also verify these test methods by experiment, prove the correctness of these testing methods and the feasibility of the engineering. The results provide important basis for the application of TDICMOS camera in the future.
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Key words:
- TDICMOS /
- charge-DN factor /
- charge transfer efficiency /
- full well charges /
- readout noise
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Overview: With the increasing demand for high resolution, high-speed transmission and miniaturization in the field of space remote sensing, the original TDICCD detector has been unable to meet the demand on circuit volume and power consumption. At the same time, with the improvement of CMOS technology, TDICMOS detectors based on charge accumulation came into being in recent years. The detector succeeds in inheriting the charge transfer principle of TDICCD detector in charge transfer mode. Therefore, the TDICMOS detector with low power consumption, high integration and charge accumulation can solve these problems.
As detector is the core component of video circuit, the performance parameters of TDICMOS detector itself have always been an important part of video circuit. Even by reducing the quality of remote sensing satellite image, it can directly affect image interpretation. Therefore, this paper focuses on the test methods of TDICMOS detector parameters. Because AD circuit, sequential circuit and interface circuit are integrated in the detector, the detector is essentially different from the traditional TDICCD and CMOS detector with digital accumulating, no matter in process or in structure. Therefore, many original methods for testing the performance parameters of the detector cannot be applied to the TDICMOS detector based on charge accumulating.
Firstly, this paper compares the TDICMOS architecture with TDICCD. Then, this paper concludes that the test methods of charge-DN factor and full-well charges, charge transfer efficiency and readout noise need to be redesigned. After that, the key parameter of charge-DN factor is effectively extracted by fitting curve about the graph based on image DN value and noise square, and then the full-well charges can be obtained. At the same time, this paper analyzes the noise model of TDICMOS. By the method of controlling the integration time and exposure, the linear relationship curve between the integration time and image noise is drawn, and the readout noise can be obtained which is independent of photon incidence and dark charge. Subsequently, a reverse driving sequence is proposed to realize the reverse movement of charges in the isolation line, so that the charge transfer efficiency can be obtained effectively. This paper also builds a TDICMOS test system for testing the three different detector parameters. The experimental results are also given in this paper and prove the correctness of the new test methods and achievable in engineering. The methods described in this paper provide an important basis for the engineering application of TDICMOS test in the future.
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表 1 两种TDI探测器比较
Table 1. Comparison between TDICCD and TDICMOS
对比类型 TDICCD TDICMOS 测试方法 输出方式 模拟信号 数字信号 影响读出噪声、满阱电荷、电荷-电压转换因子的测试 电荷读出方式 水平方向读出 积分方向读出 影响电荷转移效率 
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