Shu S L, Hou G Y, Feng J, Wang L J, Tian S C et al. Progress of optically pumped GaSb based semiconductor disk laser. Opto-Electron Adv 1, 170003 (2018). doi: 10.29026/oea.2018.170003
Citation: Shu S L, Hou G Y, Feng J, Wang L J, Tian S C et al. Progress of optically pumped GaSb based semiconductor disk laser. Opto-Electron Adv 1, 170003 (2018). doi: 10.29026/oea.2018.170003

Progress of optically pumped GaSb based semiconductor disk laser

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  • This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers (SDLs) emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently, the wavelength of GaSb based SDLs has been extended to 2.8 μm. The highest output power of the GaSb based SDLs has been reached to 17 W at the temperature of 20 ℃. By using active stabilization, the GaSb based SDL with line-width of 20 kHz and output power of 1 W was realized. Moreover, the shortest pulse obtained from the GaSb based SDLs was generated as short as 384 fs by incorporating semiconductor saturable absorber mirrors (SESAM) in the cavity.
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