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Zhang FL, Su ZC, Li Z, Zhu Y, Gagrani N et al. High-speed multiwavelength InGaAs/InP quantum well nanowire array micro-LEDs for next generation optical communications. Opto-Electron Sci 2, 230003 (2023). doi: 10.29026/oes.2023.230003
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Article Open Access
High-speed multiwavelength InGaAs/InP quantum well nanowire array micro-LEDs for next generation optical communications
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Abstract
Miniaturized light sources at telecommunication wavelengths are essential components for on-chip optical communication systems. Here, we report the growth and fabrication of highly uniform p-i-n core-shell InGaAs/InP single quantum well (QW) nanowire array light emitting diodes (LEDs) with multi-wavelength and high-speed operations. Two-dimensional cathodoluminescence mapping reveals that axial and radial QWs in the nanowire structure contribute to strong emission at the wavelength of ~1.35 and ~1.55 μm, respectively, ideal for low-loss optical communications. As a result of simultaneous contributions from both axial and radial QWs, broadband electroluminescence emission with a linewidth of 286 nm is achieved with a peak power of ~17 μW. A large spectral blueshift is observed with the increase of applied bias, which is ascribed to the band-filling effect based on device simulation, and enables voltage tunable multi-wavelength operation at the telecommunication wavelength range. Multi-wavelength operation is also achieved by fabricating nanowire array LEDs with different pitch sizes on the same substrate, leading to QW formation with different emission wavelengths. Furthermore, high-speed GHz-level modulation and small pixel size LED are demonstrated, showing the promise for ultrafast operation and ultracompact integration. The voltage and pitch size controlled multi-wavelength high-speed nanowire array LED presents a compact and efficient scheme for developing high-performance nanoscale light sources for future optical communication applications.-
Keywords:
- InGaAs/InP /
- quantum well /
- nanowires /
- LEDs
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References
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Supplementary information for High-speed multiwavelength InGaAs/InP quantum well nanowire array micro-LEDs for next generation optical communications
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Zhang FL, Su ZC, Li Z, Zhu Y, Gagrani N et al. High-speed multiwavelength InGaAs/InP quantum well nanowire array micro-LEDs for next generation optical communications. Opto-Electron Sci 2, 230003 (2023). doi: 10.29026/oes.2023.230003
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Figure 1.
(a) Schematic of p-i-n InGaAs/InP single QW nanowire LED structure with lateral and vertical cross-sections. (b) 30° tilted view SEM image of the nanowire array with a pitch of 800 nm. (c) Cross-sectional STEM-HAADF image of a nanowire showing the hexagonal shape and radial QW under different magnifications. (d) EDX elemental maps of the cross-sectional region in (c).
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Figure 2.
(a) SEM-CL spectral mapping of the InGaAs/InP single QW nanowire along the growth axis. The dashed rectangle indicates the relative position of the nanowire. (b) CL spectrum is acquired from the nanowire’s top, middle, and bottom region, respectively. (c) SEM image of the nanowire with the white arrow indicating nanowire growth direction. (d–e) Spectrally integrated intensity map at 1250–1350 nm and 1450–1550 nm. (f) Overlaid false-color CL image of (d–e), the pink and yellow region indicates the integrated CL intensity at 1250–1350 nm and 1450–1550 nm, corresponding to the emission from axial and radial QW, respectively.
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Figure 3.
(a) Schematic of fabricated nanowire array LED. (b) L-I and I-V curves of a representative nanowire array LED. (c) Voltage-dependent EL spectra at room temperature. (d) Normalized voltage-dependent EL spectra from (c). (e) Simulated voltage-dependent spontaneous emission spectra. (f) Simulated emission spectrum at the bias of 1.2 V, with the decoupled contribution from axial and radial quantum wells.
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Figure 4.
(a) Average diameter of InGaAs/InP single QW nanowire from arrays with a pitch size of 0.8, 1.0 and 2.0 μm. (b) Representative PL spectra measured from the top of the nanowire arrays with different pitch sizes. (c) EL spectra measured at a forward bias of 1.5 V from nanowire array LED with different pitch sizes. (d) Peak wavelength of the bias-dependent EL spectra from nanowire array LED with different pitch sizes.
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Figure 5.
(a) TRPL decay curve measured from the top of the nanowire array. (b) TREL signal collected from pitch 0.8 µm nanowire array LED at modulation frequencies of 0.1, 0.6 and 1 GHz. (c) 30° tilted SEM image of the nanowire arrays arranged corresponding to the letters “ANU”. (d) Infrared camera image of the EL emission from nanowire array LEDs in (c) under various current injection levels.
